Ministry
of Education and Science of Russian Federation,
Russian Academy of
Science,
M.V.Lomonosov Moscow
State University Department of Physics,
Ioffe Physico -Technical
Institute of the Russian Academy of Science
5-th All-Russian
Conference
"Nitrides of
gallium, indium and aluminum: structures and devices "
M.V.Lomonosov Moscow
State University Department of Physics
Moscow, January, 31st -
February, 2nd, 2007
Research,
development and industrial production of semiconductor structures and devices on
the base of gallium nitride and its alloys have been increasing by a record
pace for the last years. Effective light-emitting diodes have been produced;
injection lasers and powerful high-frequency transistors are created. The
perspective of replacement of incandescent and luminescent lamps with
light-emitting diode light sources based on gallium nitride was shaped out. The
national programs initiating solid-state lighting, with the view for 5-10-20
years are created in the leading industrially developed countries. The new
lighting industry based on solid-state light sources will be achieved to 2020
turnover exceeding 40 billion dollars per annum throughout the whole world.
Dozens of international and regional conferences and symposia regarding this
problem are held annually.
Four All-Russian
Conferences "Nitrides of Gallium, Indium and Aluminum: structures and
devices" took place in Russia during 2001-2005 (in Moscow and
St.-Petersburg). The conferences enjoyed the support from RFBR and the Ministry
of Industry and Science. Over 160 participants attended the Conference of 2005,
representing reports on behalf of 60 institutes and companies: A.F.Ioffe
Physical and Technical Institute of Russian Academy of Science, M.V.Lomonosov
Moscow State University, Semiconductor Physics Institute of Siberian Department
of Russian Academy of Science, Rare Earth Metal Institute, Moscow Institute of
Steel and Alloys etc. Sponsors of Conference 2005 were the Russian Fund of
Basic Researches, companies "ACOL Technologies, «Svetlana -
Optoelectronika», “Aixtron”, “TDI”.
The
conferences have shown that Russia’s interest to research and develop of
semiconductor nitrides of III group metals (GaN, AlN, InN and their
alloys) has drastically increased during last years. There have been conducted
works on technology of crystals growing, heterostructures and
p-n-heterojunctions creating, on research of physical properties of these
materials and devices, on development of the systems with these devices. Devices and systems
of the energy saving illumination based on light-emitting diode technologies
have been developed. A number of organizations acquired the up-to-date process
equipment and launched the industrial production of light-emitting diodes and
lighting devices on their basis. Apart from Moscow and S.-Petersburg institutes
and companies, some organizations and enterprises from Siberia, the Urals and
the Volga region also joined the work in this direction. Research and
development programs have been created on the subject aimed for the long period
with participation of industrial, academic, and high-school institutions.
CONFERENCE TERMS AND
FORMAT:
January 2007 in Moscow, at the Department of Physics of M.V.Lomonosov
Moscow State University, is scheduled for carrying out the
5-th All-Russian
Conference
"Nitrides of
Gallium, Indium and Aluminum: structures and devices".
Grounding on the experience from previous Meetings and Conferences and
also considering the participants circle expansion, the organizing committee
plans carrying out the Conference for three days - from January, 31st - to
February, 2nd, 2007.
The conference will consist of oral and poster
sessions.
Each oral session will be anticipated by the invited presentations. Each participant will
be provided with a certain time for an oral report or a stand for a poster. The
Conference Official language is Russian. Part of reports (from foreign
participants) can be made in English. An exhibition of industrial companies
will be organized at the Conference.
CONFERENCE PROGRAM
1. Substrates for epitaxial growth
of nitrides.
2. Technology of materials: growth
of bulk crystals.
3. Technology of materials:
epitaxial growth.
4. Optical, electrical and
structural properties of materials.
5. Properties of quantum-size
nitride-based structures.
6. Designs and technologies (growing
and post-growing) of nitride-based devices.
7. Electronic and photoelectric
nitride-based devices.
8. Nitride-based light-emitting
diodes and lasers.
9. Special session “Energy saving
illumination based on light-emitting diode technologies”.
ABSRACTS
The extended abstracts, preferably in Russian but acceptable in English
(on two pages as indicated in the attached form) and brief abstracts in English
(100 words as indicated in the attached form) are to be sent up to December 1st,
2006 to the e-mail address:
The
abstracts will be published prior to the conference.
PARTICIPANTS FINANCIAL
SUPPORT:
The
Organizing Committee applied to the Ministry of Education and Sciences, RFBR
and sponsors with a request to provide a financial support.
PRELIMINARY
REGISTRATION:
The Organizing Committee kindly asks
to complete and send the Preliminary Registration Form by e-mail to one of the
addresses: andrey.turkin@acol.biz or Nitrides2007@mail.ioffe.ru.
ABSTRACTS FORMAT:
The
extended abstracts in Russian must be made as following:
• Electronic version in Microsoft Word 6.0 – XP
version
• Publishing material volume – 2 pages
• Page size (A4) 17x24 cm2, all margins 2.4
cm. Font – Times New Roman 10, 1 interval. Printing will be made without
scaling.
• Title, authors, companies and addresses should be
centered, the main text – aligned. • Title to be made with capital letters and
marked bold.
• Authors – bold italic.
• Presenting author – underlined. • The corresponding
author (e-mail) – marked with *.
• Next (from a new line) – a company name, postal and
e-mail address – with a regular font.
• If the paper is presented by several companies,
authors in a general list are to be indexed beginning from the top (1, 2, …),
companies names and addresses are to be under each other and each one – from a
new line.
• Space between the paper title and authors list and
between the company (ies) address (es) and the main text.
• Formula presence – if possible, using Latin and
Symbol typing; centered. At least, Equation Editor may be applied.
• Citations are to be made according to the Journal
Physics and Technics of Semiconductors (“Semiconductors”). Applying automatic
citations and footers is forbidden.
• Drawings – in black and white, inserted to the
“doc”-file from the enclosed files.
• The recommended drawing width - half (6 cm) or full
page size. Optimum is inserting figures in pairs into the table (2 columns) in
the beginning or the end of a page with drawing names in the same table.
Otherwise, while inserting of a separate drawing, its name should be in the
initial graphic file containing the drawing itself.
Using the table as a means of "flowing" the basic drawing text
- is inadmissible.
• No page
numbers.
Brief abstract in English (title,
authors, company name, 100 text words) are to be placed on a separate
page.
DEADLINE FOR ABSTRACTS SENDING –
December 01,
2006!
Preliminary
registration form
(SEPARATELY
FOR EACH OF THE EXPECTED PARTICIPANTS)
1.
Full name.
2.
Company.
3.
Title.
4.
Academic title, ranks.
5.
Quantity of expected reports (to be represented by you).
6.
Reports subjects, presented by the given participant (according to the
numeration given in the Conference Program).
7.
Necessity of financial support.
8.
Necessity of accommodation reservation in the hotel.
9.
Tel,
E-mail.
DEADLINE FOR FORM PROVIDING – November 01, 2006.
ORGANISING COMMITEE
P.K.Kashkarov
M.V.Lomonosov MSU, chairman
A.E.Yunovich
M.V.Lomonosov MSU, co-chairman
P.S.Kop’ev A.F.Ioffe PhTI RAS, co-chairman
A.N.Turkin
M.V.Lomonosov MSU, scientific secretary
W.V.Lundin
A.F.Ioffe PhTI RAS, scientific secretary
A.A.Arendarenko
Elma-Malakhit Ltd.
V.N.Danilin
Pulsar
P.V.Ivannikov
M.V.Lomonosov MSU
A.F.Ivanov RFNC
– RSRITP, Snezhinsk
A.Yu.Ignatov
Monocrystal Ltd.
G.V.Itkinson Svetlana-Optoelectronics
A.N.Kovalev MISIS
V.G.Mokerov IUHFSE
RAS
A.Ye.Nikolaev
A.F.Ioffe PhTI RAS
M.A.Ormont M.V.Lomonosov MSU
V.G.Sidorov
S-PbSPU
P.A.Forsh M.V.Lomonosov MSU
M.V.Chukichev M.V.Lomonosov MSU
V.I.Shashkin IFM RAS, N.-Novgorod
PROGRAM COMMITTEE
A.E.Yunovich M.V.Lomonosov
MSU, chairman
P.S.Kop’ev A.F.Ioffe PhTI, co-chairman
A.V.Sakharov A.F.Ioffe PhTI, secretary
L.M.Kogan «Optel Center»
W.V.Lundin A.F.Ioffe FTI
Yu.N.Makarov Nitride Crystals Ltd.
F.I.Manyakhin MISIS
M.G.Milvidsky GIREDMET
O.P.Pchelyakov IFP SO RAS
V.G.Sidorov
S-PbSPU
S.Yu.Shapoval IPTM RAS