5-th
All-Russian Conference
"Nitrides of gallium, indium and aluminum:
structures and devices"
Ministry of Education and Science of Russian
Federation,
Russian
Academy of Science,
M.V.Lomonosov
Moscow State University Department of Physics,
Institute
of UHF Semiconductor Electronics,
Ioffe
Physico -Technical Institute of the Russian Academy of Science
At Financial Support of
"Svetlana Optoelectronics"
"Scientific and Technology Equipment"
“AIXTRON”
"VEECO"
“LAY TEC –GESELLSCHAFT”
“TDI”
CONFERENCE PROGRAMME
M.V.Lomonosov
Moscow State University Department of Physics
Moscow
January
31 - February 2
2007
WENESDAY,
JANUARY 31
Registration
– 9.00 – 11.30
Moscow
State University Department of Physics, room 1-31
Morning
Session, 11.30 – 14.25
Department
of Physics, Hohlov’s Room
Opening 11.30. - 12.00
11.30
- 11.40 Welcome to Moscow State University – Chairman
– prof. P.K. KASHKAROV
11.40-11.45 Information. Scientific secretary A.N. Turkin
11.45 - 12.00 RESEARCH AND DEVELOPMENT OF
NITRIDE SEMICONDUCTORS IN RUSSIA AND IN THE WORLD
A.E.Yunovich
12.00 – 14.25 Epitaxy of III-N materials
Chairman
– P.S. Kop’ev
12.00
– 12.15 III-N LEDs ON SiC
SUBSTRATES. MOCVD GROWTH DEVELOPMENT
W.V.Lundin, A.E.Nikolaev, E.E.Zavarin, M.A.Sinitsyn, A.V.Sakharov,
S.O.Usov, and A.F.Tsatsulnikov
12.15
– 12.30 EFFECT OF PARASITIC
CHEMISTRY IN AlGaN MOVPE
A.V. Lobanova, E.V. Yakovlev, R.A Talalaev
12.30
– 12.45 NON-POLAR a-(In)GaN
HETEROSTRUCTURES
E.E.Zavarin, W.V.Lundin, M.A.Sinitsyn, A.E.Nikolaev, A.V.Sakharov,
D.S.Sizov, M.M.Kulagina,
and A.F.Tsatsulnikov
12.45
– 13.00 THE EPITAXIAL LAYERS OF GaN ON
Si(111) SUBSTRATES:
THE STRUCTURAL AND OPTICAL PROPERTIES.
V. N. Bessolov, V.Yu.Davydov, Yu.V.Zhilyaev, E.V.Konenkova,
N.K.Poletaev, S.D.Raevskii, S.N.Rodin, S.L.Smirnov, S.Sharofidinov, M.P.
Shcheglov, H.S. Park è M. Koike
13.00 – 13.15 Break
Chairman – M.G. Milvidskij
13.15
– 13.35 CVD TECHNOLOGY AND PRODUCTION FOR SOLID STATE
LIGHTING
F.
Schulte, B.
Schineller, M. Heuken
13.35 – 13.50 ROLE OF COMPUTATION FLUID DYNAMIC IN THE NEW MOCVD
EQUIPMENT AND PROCESS DEVELOPMENT FOR GaN MATERIALS
B. Mitrovic, A. Gurary,
B. Quinn, E. Armour
13.50
– 14.05 TEMPERARURE
MEASUREMENT AND CONTROL DURING DEPOSITION OF THE GaN RELARED MATERIALS
M. Belousov, B. Mitrovic, S.
Ting, A. Gurary, B. Quinn
14.05
– 14.25 ON THE PHYSICS OF OPTICAL IN-SITU MONITORING
OF MOVPE GROWTH PROCESSES FOR STATE-OF-THE-ART III-NITRIDE DEVICES
E.
Steimetz, F.
Brunner, T. Schenk, T. Trepk, and J.-T. Zettler
14.25 – 15.30
LUNCH
Evening
Session 15.30 – 19.00
Department
of Physics, Hohlov’s Room
15.30 – 16.30 Epitaxy and bulk growth of III-N Materials
Chairman – A.A. Arendarenko
15.30 – 15.45 GROWTH OF GaN
LAYERS BY HYDRIDE VAPOR PHASE EPITAXY
A.V.Govorkov, L.I. D’yakonov, Yu.P. Kozlova, A.V. Markov, M.V.
Mezhennyi, A.Y. Polyakov, V.F. Pavlov, N.B. Smirnov, T.G. Yugova
15.45 – 16.00 PECULIARITIES OF
AlN-GaN COMPOUNDS GROWTH KINETICS BY AMMONIA-BASED MOLECULAR BEAM EPITAXY
A.N.Alexeev, A.E.Byrnaz, D.M.Krasovitsky, M.V.Pavlenko, S.I.Petrov,
Yu.V.Pogorelsky, I.A.Sokolov, M.A.Sokolov, M.V.Stepanov, A.P.Shkurko, V.P.Chaly
16.00
– 16.15 InGaN QW WITH HIGH
PHOTOLUMINESCENCE EFFICIENCY IN THE 490-630 nm RANGE, GROWN BY MBE PA ON ñ-Al2O3
S.V. Ivanov, V.N. Jmerik, T.V. Shubina, S.B. Listoshin, A.M.
Mizerov, À.À. Sitnikova, P.S. Kop’ev
16.15
– 16.30 PLASMA-ASSISTED MBE OF AlGaN-BASED
HETEROSTRUCTURES FOR LEDs OF UV SPECTRAL RANGE
Jmerik V.N., Semenov A.V., Mizerov A.M., Shubina T.V., Toropov
A.A., Listoshin S.B., Sakharov A.V., Zamoryanskaya M.V., Kop’ev P.S., and
Ivanov S.V.
16.30 – 16.45 BREAK
16.30 – 19.00 POSTER SESSION AND EXHIBITION
16.45 – 19.00 SPESIAL SESSION:
EXPIRIENCE OF MANUFACTURING, START-UP AND UTILIZATION
OF EPITAXIAL EQUIPMENT FOR III-N SEMICONDUCTORS IN RUSSIA
Chairman – O.P. Pchelyakov
From Nitride
Technology vision to Equipment powers
A.
Alexeev, L. Velikovsky, Y. Pogorelsky, A. Filaretov, V. Chaly
UPGRAITING OF ÑÂÅ MACHINE`S FOR GaN
STRUCTURES GROWTH BY AMMONIA-MBE
V.V.
Preobrazhenskii, M.A. Putyato, B.R. Semyagin, A.V. Vasev, V.G. Mansurov, K.S.
Zhuravlev, A.I. Toropov, O.P. Pchelyakov
DEPOSITION OF GaN LAYERS BY UHF PLASMA
S.
Shapoval, A.
Kovalchuk, V. Borodin, V. Gorbunov, Zh. Savina
Expirience of
utilization D-180 (VEECO) setup for growth InGaN/GaN LED structures
Yu.N.
Sweshnikov, R.B. Harlamov, I.N. Tsyplenkov
CREATION of III-N MOVPE SYSTEM
E.E.Zavarin, W.V.Lundin, M.A.Sinitsyn,
and A.F Tsatsulnikov
STARTUP AND EXPLOITATION of AIX2000HT MOCVD
SYSTEM IN IOFFE INSTITUTE: EXPERIENCE AND ANALYSIS
W.V.Lundin, E.E.Zavarin, M.A.Sinitsyn,
A.E.Nikolaev, and A.F Tsatsulnikov
Discussion, short presentations from users of up to date growth equipment
19.00 – 20.50 – PARTY
Thursday, 01 February
Morning
Session, 10.00 – 14.00
Department
of Physics, Hohlov’s Room
10.00 – 11.30 UNCOMMON III-N STRUCTURES AND RELATED
MATERIALS
Chairman – V.G. Sidorov
10.00
– 10.10 Slideshow «NITRIDE NANOART» / Information
10.10
– 10.30 HYBRID II-O/III-N LIGHT-EMITTING DIODES: STATE
OF THE ART AND ANALYSIS OF OPERATION
K.
A. Bulashevich, I. Yu. Evstratov, S. Yu. Karpov
10.30
– 10.45 THE SUBLIMATION STUDY OF THE GROWTH PROCESS OF
MONOCRYSTALS OF SILICON CARBID AND ALUMINIUM NITRID SOLID SOLUTIONS
B.A.Bilalov, G.D.Kardashova, M.A.Gitikchiev,
Ya.A.Alimagomedov
10.45
– 11.00 THE EFFECT OF
TRANSFORMATION OF POLYTYPE (β-SiC)-(α-SiC ) DURING CARBONIZATION OF
Si(111) SUBSTRATE
M.E.Kompan, S. A. Kukushkin, A. V. Osipov, I.G.Aksyanov, V.N.Bessolov,
E.V.Konenkova, S. K. Gordeev, S. B. Korchagina
11.00
– 11.15 METHODS OF THE PREPARATION AND THE PROPERTIES
ZnO FILMS
M.M.
Mezdrogina, V.V. Krivolapchuk, E.Yu. Danilovsky, R.V. Kuzmin
11.15
– 11.30 VISIBLE AND INFRARED LUMINESCENCE IN WURTZITE
CRYSTALS GaN WITH ADDITIONALLY INTRODUCED Zn AND Eu DOPANTS
M.M.
Mezdrogina, V.V. Krivolapchuk, V.N. Petrov, Ju.V. Kozhanova , S.N. Rodin, E.Ju.
Danilovsky,
R.V. Kuzmin
11.30 –11.45 BREAK
11.45 – 14.00 PROPERTIES OF III-N HETEROSTRUCTURES
Chairman – A.V. Saharov
11.45
– 12.05 OPTICALLY PUMPED
LASERS BASED ON NITRIDES GROWN SILICON SUBSTRATES
E. V. Lutsenko
12.05
– 12.20 CHARACTERIZATION OF
LIGHT EMITTING STRUCTURES WITH InGaN/GaN QUANTUM WELLS IN THE EBIC MODE OF
SCANNING ELECTRON MICROSCOPE
E.B. Yakimov1, N.M. Shmidt
12.20
–12.35 INVESTIGATION OF DEFECTS WITH BRIGHT EBIC CONTRAST IN
LIGHT EMITTING STRUCTURES InGaN/GaN.
N.M. Shmidt, P.S. Vergeles,, E.B. Yakimov
12.35-12.50 OPTICAL AND ELECTRICAL PROPERTIES OF AlGaN/GaN HETEROSTRUCTURES GROWN ON
SILICON AND SAPPHIRE SUBSTRATES BY MOVPE
N. V. Rzheutski, A. L. Gurskii, E. V. Lutsenko, V. N. Pavlovskii, G.
P. Yablonskii, A. S. Shulenkov, A. I. Stognii, M. Heuken, B. Schineller, H.
Kalisch, R. H. Jansen
12.50
– 13.05 LIGHT-INDUCED DIFFRACTION KINETICS AND
PHOTOLUMINESCENCE IN EPITAXIAL GaN GROWN ON SAPPHIRE SUBSTRATES
V.
N. Pavlovskii, E. V. Lutsenko, A. V. Danilchyk, G. P. Yablonskii, T. Malinauskas,
R. Aleksiejūnas, K. Jarašiūnas, H. Kalisch, R. H. Jansen, B.
Schineller, M. Heuken
13.05 – 13.20 BREAK
13.20 – 14.00
Late news, short presentations
14.00 – 15.00 Lunch
16.00-17.30 III-N BASED DEVICES
Chairman – V.G. Mokerov
16.00
– 16.15 III-N BASED TRANSISTORS / introduction
V.G. Mokerov
16.15 – 16.30 LOW NOISE AlGaN/GaN ÍÅÌÒs
I.M. Abolduyev, N.B. Gladysheva, A.A. Dorofeev, V.M. Minnebaev,
Tchernyavsky A.A.
16.30 – 16.45 POWER MICROWAVE FIELD EFFECT TRANSISTOR BASED ON MULTILAYER
HETEROSTRUCTURE AlN/AlGaN/GaN/AlGaN
A.N.Alexeev, S.B. Aleksandrov, D.E.Belyavsky, L.E. Velikovsky,
V.E.Zemlyakov, D.M.Krasovitsky, V.A.Krasnik, S.I.Petrov, M.Yu.Pogorelsky,
V.A.Razumnaya, À.Ì.Òåmnov, A.G. Tkachenko, V.P.Chaly
16.45
– 17.00 MULTILAYER
AlN/AlGaN/GaN/AlGaN HETEROSTRUCTURES WITH QUANTUM WELL CHANNEL FOR HIGH POWER
MICROWAVE FIELD EFFECT TRANSISTORS
A.N.Alexeev, S.B. Aleksandrov, A.E.Byrnaz, L.E. Velikovsky, I.E.
Velikovsky, D.M.Krasovitsky, M.V.Pavlenko, S.I.Petrov, M.Yu. Pogorelsky,
Yu.V.Pogorelsky, I.A.Sokolov, M.A.Sokolov, M.V.Stepanov, A.G. Tkachenko,
A.P.Shkurko, V.P.Chaly
17.00 – 17.15 InGaAlN
HETEROSTRUCTURES FOR HEMTs
A.V.Sakharov, W.V.lundin, E.E.Zaverin, M.A.Sinitsin,
A.F.Tsatsulnikov
17.15
– 17.30 THE NFW GENERATION OF SEMICONDUCTOR
MATERIALS WITH UTILIZATION OF MICRO- AND NANOCRYSTALLINE DIAMOND FILMS AND
PLATES
A.A. Arendarenko, A.G. Vasiliev, V.N. Danilin, T.A. Zhukova, V.I. Konov,
V.G.Ralchenko, A.V. Petrov, Yu.V.Kolkovsky, A.L. Filatov
17.30-17.45 BREAK
17.45 – 18.30 III-N BASED DEVICES
Chairman – A.N. Kovalev
17.45
– 18.00 UV DETECTORS BASED ON AlN/AlGaN
HETEROSTRUCTURES
S.V.
Averin, N.V. Alkeev
18.00
– 18.15 DEEP LEVEL IMPURITIES AND DEFECTS IN GROUP
III-NITRIDES AND IN NITRIDE-BASED DEVICES
A.Y.
Polyakov,
N.B. Smirnov, A.V. Govorkov, M.G. Milvidskii
18.15
– 18.30 RADIATION DEFECTS FORMATION IN GALLIUM
NITRIDE: EFFECTS OF CRYSTALLINE PERFECTION
A.Y.
Polyakov,
N.B. Smirnov, A.V. Govorkov, A.V. Markov, T.G. Yugova, N.G. Kolin, D.I.
Merkurisov, V.M. Boiko, I-H. Lee, S.J. Pearton, V.T. Bublik, K.D. Sherbatchev,
M.I. Voronova
18.45 – 20.50 – PARTY
Friday, 02 February
Morning
Session, 10.00 – 13.40
Department
of Physics, Hohlov’s Room
10.00 – 11.15 III-N
LEDs
Chairman – G.V. Itkinson
10.00 – 10.15 GaN-BASED STRUCTURES FOR
OPTOELECTONICS AND ELECTRONICS
A.F.Tsatsulnikov, W.V.Lundin, E.E.Zavarin, A.V.Sakharov, D.S.Sizov,
M.A.Sinitsyn
10.15
– 10.30 STUDY OF HIGH-INDIUM-CONTENT InGaN
NANOINSERTIONS IN AlGaN MATRIX
V.S.Sizov, A.F.Tsatsulnikov,
W.V.Lundin
10.30
– 10.45 ELECTROREFLECTANCE FROM InGaN/GaN/AlGaN p-n
HETEROSTRUCTURES WITH QUANTUM WELLS
L.P.Avakiants,
M.L.Badgutdinov, P.Yu.Bokov, A.V.Cherviakov, S.S.Shirokov, A.E.Yunovich
10.45
– 11.00 SPECTRA ANALYSIS AND
EFFICIENCY OF BLUE LIGHT-EMITTING DIODES BASED ON p-n InGaN/AlGaN/GaN HETEROSTRUCTURES
M.L.Badgutdinov, S.S.Shirokov, A.E.Yunovich, M.G.Agapov, D.V.Davydov,
D.A.Lavrinovich, F.M.Snegov
11.00
– 11.15 OPTIMIZATION OF GaAlN-p/GaInN/n-GaN
HETEROSTRUCTURES ELECTROLUMINESCENCE PROPERTIES BY I-V CHARACTERISTICS
E.N.Vigdorovich and Yu.N.Sveshnikov
11.15 – 11.30 BREAK
11.30 – 13.40 III-N
LEDs
Chairman – A.N. Turkin
11.30
– 11.50 LIGHTING WITH LEDS: ILLUMINATING INSIGHTS INTO
THE SOLID-STATE LIGHTING MARKET
Tim Whitaker
11.50
– 12.10 LEDs OPTICAL CHARACTERISTICS
MEASUREMENTS
R. Stolyarevskaya
12.10
– 12.25 PROBLEMS OF METROLOGICAL ASSURANCE
OF LIGHT-EMITTING DIODES OPTICAL MEASUREMENTS
L. S. Lovinsky
12.25
– 12.40 POWERFUL
LIGHT-EMITTING DIODES OF THE WHITE LUMINESCENCE WITH THE LIGHT STREAM UP TO 300
lm AND LIGHT FEEDBACK UP TO 70 lm/W
Kogan L.M., Galchina N.A., Rassohin I.T., Soschin N.P.
12.40
– 12.55 THE COMPARISON CHARACTERISTICS OF
DIFFERENT PHOSPHOR CLASSES FOR WHITE LED.
N.P. Soschin
12.55
– 13.10 HIGH EFFICIENCY TERNARY PHOSPHORS
FOR WHITE LIGHT EMITTING DIODES
R.B. Jabbarov, A.E. Yunovich, N.N. Musayeva, B.G. Tagiev, O.B.
Tagiev
13.10 – 13.25 EFFICIENCY OF
WHITE LIGHT-EMITTING DIODES
A. Feopentov, A. Bogdanov
13.25
– 13.40 OPTIMIZATION OF FABRICATION TECHNIQUE
FOR REFLECTIVE CONTACTS IN HIGH-POWER FLIP-CHIP AlGaInN-BASED LEDs
I.P.Smirnova, D.A.Zakheim, M.M.Kulagina, E.M.Arakcheeva
13.40 – 15.00
LUNCH
Evening
Session 15.30 – 19.00
Department
of Physics, Hohlov’s Room
15.00 – 16.45
LEDs and Lighting Systems
Chairman – W.V. Lundin
15.00 – 15.15 SOME APPROPRIATENESS OF BLUE InGaN/GaN LED DEGRADATION
S.A. Belnik, E.D. Vasilieva, D.V. Davydov, A.E. Chernyakov, P.S. Kop'ev,
D.A. Lavrinovich, A.L. Zakgeim, F.M. Snegov, N.M. Shmidt, V.V.Uelin
15.15
– 15.30 RADIATIVE AND
NONRADIATIVE RECOMBINATION DYNAMIC IN BLUE LED
A.A.Greshnov, A.E.Chernyakov, D.V.Davydov, A.P.Kartashova,
D.A.Lavrinovich, F.M.Snegov, A.L.Zakgeim, V.V.Ratnikov, O.A.Soltanovic, N.M.Shmidt,
E.B.Yakimov
15.30
– 15.45 COMPUTER SIMULATION of InGaN LEDs
O.I. Rabinovich, V.P.Sushkov, A.V. Shishov
15.45
– 16.00 Active region
temperature measurements for the powerful
InGaN/GaN based light emitting diodes by
luminescence methods
A. V. Danilchyk, E. V. Lutsenko, V. N. Pavlovskii,N. V. Rzheutski
, K. A. Osipau, G. P. Yablonskii
16.00
– 16.15 THERMAL PARAMETERS OF BLUE
InGaN/GaN LIGHT-EMITTING DIODES
Y.A. Bumai, O.S. Vaskov, D.S. Domanevskii
16.15
– 16.30 THERMAL PROCESS
ANALYSIS IN LED DEVICES
Yu.V. Trofimov, S.Yu. Nikitin, V.I. Tsvirko, V.K. Sivenkov, S.I.
Lishik, O.Ya.Tichonenko
16.30 – 16.45 LED LIGHTING AND SIGNALING DEVICES FOR TRANSPORTATION AND TRAFFIC SAFETY
SYSTEMS
Trofimov Yu. V., Posedko V.S., Lishik S.I., Tsvirko V.I., Pautino
A.A.
CLOSING
16.50 - 17.10
Chairman
– A.E. Yunovich
Secretary Information – A.N.Turkin, V.V. Lundin 16.50 - 17.00
Closing
remark – P.S. Kop’ev 17.00 - 17.10
POSTER SESSION
31 JANUARY 16.30 – 19.00
1 FEBRUARY 13.05 – 14.00
HOHLOV’s ROOM HALL
P 1 MODEL OF p-TYPE DOPING IN GaN MOVPE
E.V. Yakovlev, S.Yu. Karpov, R.A. Talalaev
P 2 PECULIARITIES OF PLASMA-ASSISTED MOLECULAR
BEAM EPITAXY GROWTH OF AlGaN ALLOYS
A.N. Semenov, V.N. Jmerik, A.M. Mizerov, S.V. Ivanov
P 3 FEATURES OF BULK ALUMINIUM NITRIDE CRYSTALS
GROWTH
O.V. Avdeev, I.S. Barash, T.Yu. Chemekova, E.N. Mokhov, A.D.
Roenkov, A.S. Segal, Yu.A. Vodakov, and Yu. N. Makarov
P 4 THE METAL-CERAMIC PACKAGE FOR GaN TRANSISTOR
V.A. Sidorov
P 5 DEPENDANCE BETWEEN WAVE-LENGTH AND THIKNESS
OF InGaN LAYERS IN MQWs
Ermoshin I. Sveshnokov Y. Kharlamov R.
P 6 WAYS OF INCREASING AlGaInN LED
HETEROSTRUCTURE QUANTUM EFICIENCY AT HIGH PUMPING DENSITY
D.A.Zakheim, A.S.Pavljuchenko, W.V.Lundin
P 7 SUPPRESSION OF CARRIER LEAKAGE FROM THE
ACTIVE REGION OF LIGHT-EMITTING HETEROSTRUCTURES BY GRADED-COMPOSITION BLOCKING
LAYER
K. A. Bulashevich, S. Yu. Karpov, R. A. Suris
P 8 METHOD
OF CONTROLLING POTENTIAL DEGRADATION OF AlGaInN LEDs CHARACTERISTICS
S.G.Nikiforov, V.P.Sushkov
P 9 EVOLUTION OF CARRIER DISTRIBUTION IN MQW
InGaN/GaN DURING DEGRADATION OF BLUE LIGHT EMITTING DIODES
M.G.Agapov, E.V.Bogdanova, D.V.Davydov, A.L.Zakgeim,
D.A.Lavrinovich, F.M.Snegov, A.E.Chernyakov, N.M.Shmidt
P 10 INVESTIGATION of InGaN and AlGaInP LEDs
QUANTUM EFFICIENCY ON CURRENT DENSITY.
A.L.Archipov, V.S. Abramov,V.P.Sushkov, A.V. Shishov, A.N.Turkin
P 11 MEHANISM OF SERIES RESISTANCE FORMATION DURING CURRENT FLOW IN
COMPENSATED LAYER OF WIDE-BANDGAP LEDs
F.I. Manyakhin
P 12 ANALYSIS OF LOW
ENERGY SIDE OF ELECTROLUMINESCENCE (EL) SPECTRA OF LIGHT-EMITTING DIODES WITH
SINGLE InGaN QUANTUM WELL
D.S. Domanevskii, V.A. Vilkotskii, U.V. Trophimov, B.G. Arnaudov, R.D.
Kakanakov, S.A. Manego
P12 LED MODULS, LINEAR ARRAYS AND WHITE-LIGHT LAMPS
L.M.Kogan, G.V.Puzachev,
I.T.Rassohin,S.D.Yakubovskii
P 13 ABOUT METHODS AND PROGRAMS OF ILLUMINATION’S
CALCULATIONS OF WORK-PLACES FROM LIGHT-EMITTING DIODE MODULES
E.M.
Gutzeit
P 14 “TWO-RESONANT” HYSTERESIS OF A TUNNEL CURRENT
IN HETEROSTRUCTURE
w-GaN/AlGaN (0001)
A.N.Razhuvalov, S.N.Griniaev
P 15 STUDY OF HVPE GaN EPILAYERS STRUCTURE BY
METALLOGRAPHIC AND X-RAY METHODS
L.I.Dyakonov, Yu.H.Kozlova, A.V.Markov, M.V.Mezhennyi, V,F.Pavlov,
T.G.Yugova
P 16 ELECTRICAL PROPERTIES OF SEMI-INSULATING GaN
(Fe) LAYERS GROWN BY MOLECULAR BEAM EPITAXY
A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, A.V. Markov, A.M.
Dabiran, A.M. Wowchak, P.P. Chow
P 17 ELECTROPHYSICAL PROPERTIES OF SOLID SOLUTIONS InxGa1-xN
T.A. Komissarova,
N.N. Matrosov, L.I. Ryabova, D.R. Khokhlov, V.N. Jmerik, S.V. Ivanov
P 18 LATTICE DYNAMICS AND RAMAN SPECTRA OF InGaN ALLOYS
A.N.
Smirnov,
V.Yu. Davydov, I.N. Goncharuk, M.A. Yagovkina, E.E. Zavarin, M.A. Sinitsyn, and M.B. Smirnov
P 19 ACCUMULATION OF STRUCTURAL DEFECTS IN MBE GaN LAYERS DURING ERBIUM ION
IMPLANTATION
N.A. Sobolev,
V.I. Sakharov, I.T. Serenkov
P 20 A SENSITIZATION OF EMISSION AND MIGRATIONS MECHANISM OF THE EXCITATIONS
ELECTRONS IN THE QUANTUM WELLS InGaN/GaN DOPED WITH Eu
V.V. Krivolapchuk,
M.M. Mezdrogina, W.V. Lundin
P 21 THE EFFECT THE MIGRATIONS EXCITATION AND THE CAPTURE OF THE CARRIERS ON
THE PHOTOLUMINESCENCE SPECTRA IN WURTZITE CRYSTALS GaN DOPED WITH Eu, Er
M.M.
Mezdrogina, V.V. Krivolapchuk, Ju.V. Kozhanova, V.N. Petrov, S.N.Rodin, A.E.
Cherenkov
P 22 MODELS OF CONDUCTIVITY, EFFECT OF REINFORCEMENT THE DIELECTRIC
PERME-ABILITY AND OPTICAL CHARACTERISTICS NITRID ALUMINUM IN CARBIDE OF
SILI-CON (SIC)1-X(ALN)X
Altukhov
V.I.,
Bilalov B.A., Kazarov B.A., Safaraliev G.K.
P 23 FORMATION OF NEW TYPE “CHAIN-LIKE” REGULAR NANOSTRUCTURES ON n‑GaN(0001)
SURFACE
G.V.
Benemanskaya, V.S. Vikhnin, M.N. Lapushkin, N.M. Shmidt
P 24 ELECTRONIC PROPERTIES AND ENERGETIC PARAMETERS OF 2D ACCUMULATION
LAYERS OF Cs, Ba/n-GaN (0001) INTERFACES
G.V.
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